Growth of HgBa2Ca2Cu3O8+δ thin films on LaAlO3 substrates using fast temperature ramping Hg-vapor annealing

Applied Physics Letters

Volumn 68, Issue 18, 1996, Pages 2565-2567

  Yun, S H ^a   Wu, J Z ^a   Tidrow, S C ^b   Eckart, D W ^b  

^a UNIVERSITY OF KANSAS   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CALCIUM COMPOUNDS; CHEMICAL REACTIONS; CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); FILM GROWTH; INTERFACES (MATERIALS); LANTHANUM COMPOUNDS; MAGNETIC FIELDS; MERCURY COMPOUNDS; SUPERCONDUCTING FILMS; SUPERCONDUCTING TRANSITION TEMPERATURE; X RAY DIFFRACTION;

FAST TEMPERATURE RAMPING ANNEALING; INTERFACE REACTIONS; LANTHANUM ALUMINATE; MERCURY BARIUM CALCIUM COPPER OXIDE;

HIGH TEMPERATURE SUPERCONDUCTORS;

EID: 0030128495     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116185     Document Type: Article

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