Raman response of (11N)-oriented GaAs/AlAs superlattices within the framework of the bond polarizability model

Solid State Communications

Volumn 98, Issue 4, 1996, Pages 307-311

  Castrillo, Pedro ^a,b   Armelles, Gaspar ^b   Barbolla, Juan ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

A. semiconductors; D. phonons; E. inelastic light scattering

Indexed keywords

CRYSTAL ORIENTATION; INTERFACES (MATERIALS); LIGHT SCATTERING; MATHEMATICAL MODELS; PHONONS; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

BOND POLARIZABILITY MODEL; INELASTIC LIGHT SCATTERING; MODE MIXING; PARITY; RAMAN INTENSITY; RAMAN RESPONSE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0030128229     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00065-8     Document Type: Article

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