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Journal of Applied Physics

Volumn 79, Issue 7, 1996, Pages 3592-3596

Study of photoconductivity in AlxGa1-xAs/GaAs modulation-doped heterostructures

(3) Peng, Zhongling a Saku, Tadashi a Horikoshi, Yoshiji a

a NTT Basic Research Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON DENSITY MEASUREMENT; FERMI LEVEL; HALL EFFECT; PHOTOCONDUCTIVITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SILICON; THERMAL EFFECTS; TIN;

ALUMINUM GALLIUM ARSENIDE; ELECTRON HOLE PAIRS; HALL EFFECT MEASUREMENT; MODULATION DOPED HETEROSTRUCTURES; PHOTON ENERGY; TWO DIMENSIONAL ELECTRON GAS;

HETEROJUNCTIONS;

EID: 0030128109 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.361412 Document Type: Article

Times cited : (9)

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