A new method for estimating the diffusivities of vacancies in passive films

Electrochimica Acta

Volumn 41, Issue 6, 1996, Pages 783-789

  Sikora, Elzbieta ^a,b   Sikora, Janusz ^a   Macdonald, Digby D ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b INSTITUTE OF PHYSICAL CHEMISTRY   (Poland)

Author keywords

Mott Schottky analysis; Oxygen vacancy diffusivity; Passive film; Tungsten

Indexed keywords

DIFFUSION IN SOLIDS; ESTIMATION; FILM GROWTH; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PHOSPHORIC ACID; POINT DEFECTS; TRANSPORT PROPERTIES; TUNGSTEN COMPOUNDS;

DIFFUSIVITY; MOTT-SCHOTTKY ANALYSIS; OXYGEN VACANCY DIFFUSION COEFFICIENT; PASSIVE FILMS; POINT DEFECT MODEL; SEMICONDUCTOR PROPERTIES;

SEMICONDUCTING FILMS;

EID: 0030128018     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/0013-4686(95)00312-6     Document Type: Article

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