Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium

Surface Science

Volumn 350, Issue 1-3, 1996, Pages 221-228

  Park, Seong Ju ^b   Ro, Jeong Rae ^a   Ha, Jeong Sook ^a   Kim, Sung Bock ^a   Park, Hyo Hoon ^a   Lee, El Hang ^a   Yi, Jae Yel ^c   Lee, Joeng Yong ^d  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

^d Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Atomic force microscopy; Chemical beam epitaxy; InGaAs; Semiconductor semiconductor heterostructures; Surface structure

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BEAM EPITAXY; DIFFUSION; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; INTERFACES (MATERIALS); KINETIC THEORY; ORGANOMETALLICS; PROBABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

ADSORBATES; INTERFACE MISFIT DISLOCATION; SURFACE CORRUGATION; TRIETHYLGALLIUM; TRIMETHYLINDIUM; UNPRECRACKED MONOETHYLARSINE;

SURFACE STRUCTURE;

EID: 0030127958     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)80060-4     Document Type: Article

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