Low-frequency shot noise in double-barrier resonant-tunnelling GaAs/AlxGa1-xAs structures in a strong magnetic field

Journal of Physics Condensed Matter

Volumn 8, Issue 17, 1996, Pages 3033-3045

  Lund Bo O ^a   Galperin, Yu ^a,b  

^a UNIVERSITY OF OSLO   (Norway)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRIC CURRENTS; ELECTRODES; ELECTRON TUNNELING; GREEN'S FUNCTION; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; RESONANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SHOT NOISE;

BARRIER CAPACITANCE; BIAS VOLTAGE; CHARGE ACCUMULATION; DOUBLE BARRIER RESONANT TUNNELING STRUCTURES; LANDAU LEVEL; NOISE SPECTRUM; TWO DIMENSIONAL;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030127822     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/8/17/014     Document Type: Article

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