Multiple source quantum well model of porous silicon light emission

Journal of the Electrochemical Society

Volumn 143, Issue 4, 1996, Pages 1394-1398

  Zhang, S L ^a,c   Chen, Y ^b   Jia, L ^a   Li, J J ^b   Huang, F M ^a   Zhu, T ^b   Wang, X ^a   Liu, Z F ^b   Cai, S M ^b   Wong, S P ^d   Wilson, I H ^d  

^a PEKING UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

^c FUDAN UNIVERSITY   (China)

^d CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT EMISSION; MODELS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING MODELS; QUANTUM CONFINEMENT EFFECT; REMNANT SILICON;

POROUS SILICON;

EID: 0030127694     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836649     Document Type: Article

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