Physical and chemical properties of the cylindrical rods SiCx (x = 0.3-1.2) grown from Si(CH3)2Cl2 by laser pyrolysis

Materials Chemistry and Physics

Volumn 44, Issue 1, 1996, Pages 59-66

  Chang, Hua ^a   Lee, Long Jeng ^a,c   Hwang, Rong Li ^a,d   Yeh, Chiu Tih ^a   Lin, M S ^a   Lou, J C ^a   Hseu, T H ^a   Wu, T B ^a   Chen, Yeong Jgi ^b   Tang, Chia Pin ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c INSTRUMENT TECHNOLOGY RESEARCH CENTER   (Taiwan)

^d Taiwan Hopax Chems Mfg Co   (Taiwan)

Author keywords

Laser pyrolysis; Laser induced chemical vapor deposition; Si(CH3)2Cl2

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; COMPOSITION; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; LASER APPLICATIONS; PHOTOVOLTAIC EFFECTS; PHYSICAL PROPERTIES; PYROLYSIS; THERMAL EFFECTS; X RAY DIFFRACTION;

ATOMIC RATIOS; AUGER DEPTH PROFILE SPECTRA; CHEMICAL PROPERTIES; COMPOSITION DISTRIBUTION; CYLINDRICAL RODS SILICON CARBIDE; ELEMENTAL ANALYSIS; LASER INDUCED CHEMICAL VAPOR DEPOSITION; LASER PYROLYSIS; X RAY DIFFRACTION PATTERN;

SILICON CARBIDE;

EID: 0030127564     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/0254-0584(95)01663-F     Document Type: Article

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