Gate length effect on the RTS noise amplitude in SOI MOSFET's

IEEE Electron Device Letters

Volumn 17, Issue 4, 1996, Pages 181-183

  Simoen, E ^a,b   Claeys, C ^a,b  

^a IEEE

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; CRYSTAL DEFECTS; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC POWER SUPPLIES TO APPARATUS; GATES (TRANSISTOR); SEMICONDUCTING FILMS; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE;

GATE LENGTH EFFECT; RANDOM TELEGRAPH SIGNAL NOISE AMPLITUDE; TRAPPING CENTERS;

MOSFET DEVICES;

EID: 0030126866     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.485167     Document Type: Article

References (7)

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