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Volumn 349, Issue 2, 1996, Pages 145-154

Interaction of H with epitaxial Er suicide layers on Si(111): Adsorption versus absorption

(5) Saintenoy, S a Wetzel, P a Pirri, C a Bolmont, D a Gewinner, G a

Author keywords

Angle resolved photoemission; Chemisorption; Epitaxy; Metal semiconductor interfaces; Silicides; Surface and bulk electronic phenomena

Indexed keywords

ABSORPTION; ADSORPTION; CHEMICAL BONDS; CHEMISORPTION; EPITAXIAL GROWTH; ERBIUM COMPOUNDS; HETEROJUNCTIONS; HYDROGEN; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PHOTOEMISSION; SEMICONDUCTING SILICON;

ANGLE RESOLVED PHOTOEMISSION; ERBIUM SILICIDE; METAL SEMICONDUCTOR INTERFACES; SILICIDES; SURFACE DANGLING BONDS;

SURFACE PHENOMENA;

EID: 0030126783 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(95)01060-2 Document Type: Article

Times cited : (13)

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