Disorder and epitaxy: Cr on Al{001}

Surface Science

Volumn 349, Issue 2, 1996, Pages 160-164

  Kim, S K ^a   Jona, F ^a   Marcus, P M ^a  

^a Stony Brook University   (United States)

Author keywords

Aluminum; Chromium; Epitaxy; Low energy electron diffraction (LEED)

Indexed keywords

ALUMINUM; AUGER ELECTRON SPECTROSCOPY; CHROMIUM; DEPOSITION; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; METALLIC FILMS; ORDER DISORDER TRANSITIONS; ULTRATHIN FILMS;

PSEUDOMORPHIC EPITAXY; QUANTITATIVE LOW ENERGY ELECTRON DIFFRACTION; ULTRATHIN METAL FILMS;

SURFACE PHENOMENA;

EID: 0030126692     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)00985-X     Document Type: Article

References (16)

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15. We have no information about the rate at which the LEED pattern disappears. This disappearance may well be gradual in the coverage range from o to about 0.5 -all we know is that the obliteration is complete for about 1/2 of a monolayer.
16. Actually, we have no direct evidence that the epitaxial Cr film is separated from the substrate by a disordered, as opposed to a recrystallized or reordered Cr layer, but there are arguments in favor of the former: (1) if the disorder is due to a reaction between Cr and Al, i.e. a mixing of Cr and Al with the formation of chemical bonds, then the addition of more Cr is not likely to remove the mixing in the intermediate layers; and (2) if the layer separating the epitaxial film from the substrate were recrystallized or reordered, we would expect to see a better, sharper LEED pattern than is actually observed.