Effect of surface recombination velocity on the threshold current and differential quantum efficiency of the surface-emitting laser diode

IEEE Journal of Quantum Electronics

Volumn 32, Issue 4, 1996, Pages 597-606

  Ogura, Mutsuo ^a,b   Hsieh, H C ^c  

^a IEEE

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c IOWA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRIC CURRENTS; ELECTROMAGNETIC FIELD THEORY; HETEROJUNCTIONS; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES;

CARRIER DIFFUSION MODEL; SURFACE EMITTING LASER DIODES; SURFACE RECOMBINATION VELOCITY; THRESHOLD CURRENT; VAINSHTEIN OPEN CAVITY MODEL;

SEMICONDUCTOR LASERS;

EID: 0030126392     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.488832     Document Type: Article

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