Effect of dopants on ageing properties for the PMN-0.1 PT relaxor ferroelectric ceramics

Journal of Materials Science: Materials in Electronics

Volumn 7, Issue 2, 1996, Pages 133-135

  Wang, Yu ^a,b   Gui, Zhilun ^a   Chan, Y C ^b   Li, Longtu ^a   Zhang, Xiaowen ^a  

^a TSINGHUA UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; CERAMIC MATERIALS; COMPOSITION; DIELECTRIC RELAXATION; DOPING (ADDITIVES); EFFECTS; IONS; LEAD COMPOUNDS; MATERIALS TESTING; OXIDES; PEROVSKITE;

DIELECTRIC AGEING; EQUIVALENT SUBSTITUTORS; FERROELECTRIC RELAXOR SYSTEM; ISOTHERMAL AGEING PROPERTIES; METALLIC IONS;

FERROELECTRIC MATERIALS;

EID: 0030126256     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00225636     Document Type: Article

References (6)

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3. WANG YU, GUI ZHI-LUN, LI LONG-TU and ZHANG XIAO-WEN, J. Chin. Ceram. Soc., 22 (6) (1994) 000.
4. W. A SCHULZE and KIYOSHI OGINO, Ferroelectrics 87 (1988) 361.
5. S L SWARTZ and T R SHROUT, Mater. Res. Bull. 17 (1982) 1245.
6. R. D. SHANNON and C. T. PREWITT, Acta Crystallogr., B26 (1970) 1076.