Analysis of post-transit photocurrents and electroluminescence spectra from a-Si:H solar cells

Journal of Applied Physics

Volumn 79, Issue 7, 1996, Pages 3597-3602

  Yan, Baojie ^a,c   Han, Daxing ^b   Adriaenssens, Guy J ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b UNIVERSITY OF NORTH CAROLINA   (United States)

^c UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; INTERFACES (MATERIALS); MATHEMATICAL MODELS; NUMERICAL ANALYSIS;

CONDUCTION BAND EDGE; ELECTRON HOLE PAIRS; LIGHT INTENSITY; LIGHT SOAKING; POST TRANSIT PHOTOCURRENT ANALYSIS;

SILICON SOLAR CELLS;

EID: 0030126114     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361413     Document Type: Article

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