10-Gb/s two-channel monolithic photoreceiver array using waveguide p-i-n PD's and HEMT's

IEEE Photonics Technology Letters

Volumn 8, Issue 4, 1996, Pages 563-565

  Takahata, K ^a   Muramoto, Y ^a   Akatsu, Y ^a   Akahori, Y ^a,b   Kozen, A ^a   Itaya, Y ^a,b  

^a NTT CORPORATION   (Japan)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); ARRAYS; BIT ERROR RATE; CROSSTALK; HIGH ELECTRON MOBILITY TRANSISTORS; OPTICAL WAVEGUIDES; PHOTODIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

TRANSIMPEDANCE AMPLIFIERS; TWO CHANNEL MONOLITHIC PHOTORECEIVER ARRAY;

INTEGRATED OPTOELECTRONICS;

EID: 0030125865     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.491227     Document Type: Article

References (12)

1. Y. Akahori, Y. Akatsu, A. Kohzen, and J. Yoshida, "10-Gb/s high-speed monolithically integrated photoreceiver using InGaAs pin PD and planar doped InAlAs/InGaAs HEMT's," IEEE Photon. Technol. Letters, vol. 4, no. 7, pp. 754-756, 1992.
2. L. M. Lunardi, S. Chandrasekhar, A. H. Gnauck, C. A. Burrus, R. A. Hamm, J. W. Sulhoff, and J. L. Zyskind, "A 12-Gb/s high-performance, high-sensitivity monolithic p-i-n/HBT photoreceiver module for long-wavelength transmission systems," IEEE Photon. Technol. Lett., vol. 7, no. 2, pp. 182-184, 1995.
3. E. Sano, M. Yoneyama, S. Yamanata, and Y. Matsuoka, "23 GHz band-width monolithic photoreceiver compatible with InP/InGaAs double-heterojunction bipolar transistor fabrication process," Electron. Lett., vol. 30, no. 24, pp. 2064-2065, 1994.
4. W. Kuebart, D. Kaiser, H. Grobkopf, F. Besca, G. Luz, J.-H. Reemtsma, I. Gyuro, H. Conrad, H. Grob, and F. Grotjahn, "Monolithically integrated InP-based PIN-HEMT receiver OEIC with a receiver-sensitivity of -19.2 dBm at 10 Gbit/s," in Tech. Dig. Europ. Conf. Opt. Commun., 1994, postdeadline paper, pp. 79-82.
5. J. E. Bowers and C. A. Burrus, "Ultrawide-band long-wavelength p-i-n photodetectors," J. Lightwave Technol., vol. LT-5, pp. 1339-1350, 1987.
6. K. Kato, S. Hata, K. Kawano, J. Yoshida, and A. Kozen, "A high-efficiency 50 GHz InGaAs multimode waveguide photodetector," IEEE J. Quantum Electron., vol. 28, pp. 2728-2735, 1992.
7. Y. Yamada, S. Suzuki, K. Moriwaki, Y. Hibino, Y. Tohmori, Y. Akatsu, Y. Nakasuga, T. Hashimoto, H. Terui, M. Yanagisawa, Y. Inoue, Y. Akahori, and R. Nagase, "A hybrid integrated optical WDM transmitter/receiver module for optical subscriber systems utilizing a planar lightwave circuit platform," in Tech. Dig., Opt. Fiber Commun., 1995, postdeadline papers, PD-12.
8. W.-P. Hong, G. K. Chang, R. Bhat, C. Nguyen, and M. Koza, "Monolithically integrated waveguide-MSM detector-HEMT amplifier receiver for long-wavelength lightwave systems," IEEE Photon. Technol. Letters, vol. 3, no. 2, pp. 156-158, 1991.
9. S. Chandrasekhar, L. M. Lunardi, R. A. Hamm, and G. J. Qua, "Eightchannel p-i-n/HBT monolithic receiver array at 2.5 Gb/s per channel for WDM applications," IEEE Photon. Technol. Lett., vol. 6, no. 10, pp. 1216-1218, 1994.
10. Y. Muramoto, K. Kato, Y. Akahori, M. Ikeda, A. Kohzen, and Y. Itaya, "High-speed monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and HEMT's," IEEE Photon. Technol. Lett., vol. 7, no. 6, pp. 685-687, 1995.
11. H. Yano, G. Sasaki, N. Nishiyama, M. Murata, H. Kamiyama, and H. Hayashi, "5 Gbit/s four-channel receiver optoelectronic integrated circuit array for long-wavelength lightwave systems," Electron. Lett., vol. 28, no. 5, pp. 503-504, 1992.
12. Y. Akahori, M. Ikeda, and A. Kohzen, "A 2.8 Gbit/s monolithically integrated long wavelength five-channel pin-HEMT array and an ultrawide-bandwidth pin-HEMT," in Tech. Dig. Europ. Conf. Opt. Commun., 1993, TuP6.5.