Measurement of spontaneous-emission enhancement near the one-dimensional photonic band edge of semiconductor heterostructures

Physical Review A - Atomic, Molecular, and Optical Physics

Volumn 53, Issue 4, 1996, Pages 2799-2803

  Tocci, Michael D ^a   Scalora, Michael ^a   Bloemer, Mark J ^b   Dowling, Jonathan P ^b   Bowden, Charles M ^b  

^a UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

^b U S ARMY SPACE AND MISSILE DEFENSE COMMAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CURRENT DENSITY; HETEROJUNCTIONS; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; MIRRORS; NUMERICAL METHODS; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM ARSENIDE; ALUMINUM GALLIUM ARSENIDE; BAND EDGE; DISTRIBUTED BRAGG REFLECTORS; MATRIX TRANSFER METHOD; PHOTONIC BAND GAP STRUCTURES; POWER SPECTRUM; SPONTANEOUS EMISSION;

EMISSION SPECTROSCOPY;

EID: 0030125603     PISSN: 10502947     EISSN: 10941622     Source Type: Journal    
DOI: 10.1103/PhysRevA.53.2799     Document Type: Article

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