Efficient blue light-emitting diodes from a soluble poly(para-phenylene): Internal field emission measurement of the energy gap in semiconducting polymers

Synthetic Metals

Volumn 78, Issue 3, 1996, Pages 263-267

  Yang, Y ^a   Pei, Q ^a   Heeger, A J ^a  

^a DUPONT COMPANY   (United States)

Author keywords

Diodes; Energy gap; Internal field emission; Poly(p phenylene); Semiconducting polymers

Indexed keywords

ELECTRON TUNNELING; ENERGY GAP; EXCITONS; LIGHT EMISSION; OPTICAL VARIABLES MEASUREMENT; ORGANIC POLYMERS; QUANTUM OPTICS; RELAXATION PROCESSES; SEMICONDUCTING POLYMERS; SOLUBILITY;

BLUE LIGHT EMITTING DIODES; FOWLER-NORDHEIM TUNNELING; INTERNAL FIELD EMISSION; LATTICE RELAXATION; OPTICAL GAP; POLY PARA PHENYLENE; SELF LOCALIZATION ENERGIES; SINGLE CARRIER DEVICES;

LIGHT EMITTING DIODES;

EID: 0030125575     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/0379-6779(96)80148-2     Document Type: Article

References (25)

1. (a) P.L. Burn, A.B. Holmes, A. Kraft, D.D.C. Bradley, A.R. Brown and R.H. Friend, J. Chem. Soc., Chem, Commun., (1992) 32;
2. (b) P.L. Burn, A.B. Holmes, A. Kraft, D.D.C. Bradley, A.R. Brown, R.H. Friend and R.W. Gymer, Nature, 356 (1992) 47;
3. (c) J.H. Burroughes, D.D.C. Bradley, A.R. Brown, R.N. Marks, K. Mackay, R.H. Friend, P.L. Burn and A.B. Holmes, Nature, 347 (1990) 539.
4. A.R. Brown, D.D.C. Bradley, P.L. Burn, J.H. Burroughes, R.H. Friend, N. Greenham, A.B. Holmes and A. Kraft, Appl. Phys. Lett., 61 (1992) 2793.
5. G. Grem, G. Leditzky, B. Ullrich and G. Leising, Adv. Mater., 4 (1992) 36.
6. Y. Ohmori, C. Morishima, M. Uchida and K. Yoshino, Jpn. J. Appl. Phys., 31 (1992) L568.
7. D. Braun, G. Gustafsson, D. McBranch and A.J. Heeger, J. Appl. Phys., 72 (1992) 564.
8. D. Braun and A.J. Heeger, Appl. Phys. Lett., 58 (1991) 1982.
9. G. Gustafsson, Y. Cao, G.M. Treacy, F. Klavetter, N. Colaneri and A.J. Heeger, Nature, 357 (1992) 477.
10. I.D. Parker, J. Appl. Phys., 75 (1994) 1656.
11. Y. Yang and A.J. Heeger, Appl. Phys. Lett., 64 (1994) 1245.
12. J. Stampfl, St. Tasch, G. Leising and U. Schert, Synth. Met., 71 (1995) 2125.
13. G. Grem, V. Martin, F. Meghdadi, C. Paar, J. Stampfl, J. Sturm, S. Tasch and G. Leising, Synth. Met., 71 (1995) 2193.
14. W.X. Jing, A. Kraft, S.C. Moratti, J. Grüner, F. Cacialli, P.J. Hamer, A.B. Holmes and R.H. Friend, Synth. Met., 67 (1994) 161.
15. Q. Pei, unpublished.
16. I.D. Parker, Q. Pei and M. Marrocco, Appl. Phys. Lett., 65 (1994) 1272.
17. N. Greenham, R.H. Friend and D.D.C. Bradley, Adv. Mater., 6 (1994) 491.
18. Y. Yang, E. Westweele, C. Zhang, P. Smith and A.J. Heeger, J. Appl. Phys., 77 (1995) 694.
19. S.M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1981.
20. (a) T.W. Hagler, K. Pakbaz, K.F. Voss and A.J. Heeger, Phys. Rev. B, 44 (1991) 8652;
21. (b) T.W. Hagler, K. Pakbaz and A.J. Heeger, Phys. Rev. B, 49 (1994) 10 968;
22. (c) T.W. Hagler, K. Pakbaz and A.J. Heeger, Phys. Rev. B, 51 (May 15) (1995).
23. K. Pakbaz, C.H. Lee, A.J. Heeger. T.W. Hagler and D. McBranch, Synth Met., 64 (1994) 295.
24. I.H. Campbell, T.W. Hagler, D.L. Smith and J.P. Ferraris, to be published.
25. C.H. Lee, G. Yu, N.S. Sariciftci and A.J. Heeger, Synth. Met., 75 (1995) 127.