SiO2 etching in C4F8/O2 electron cyclotron resonance plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 SUPPL. B, 1996, Pages 2483-2487

  Siozawa, Ken Itiro ^a   Tabaru, Kenji ^a   Maruyama, Takahiro ^a   Fujiwara, Nobuo ^a   Yoneda, Masahiro ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

C4F8 O2 plasma; Electron cyclotron resonance; Fluorocarbon molecules; O2 addition; Plasma etching; RIE lag effect

Indexed keywords

ASPECT RATIO; ELECTRON CYCLOTRON RESONANCE; FLUOROCARBONS; MASS SPECTROMETERS; ORIFICES; OXYGEN; REACTIVE ION ETCHING; SILICA;

ETCHING SELECTIVITY; POLYSILICON; REACTIVE ION ETCHING LAG EFFECT;

PLASMA ETCHING;

EID: 0030125482     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2483     Document Type: Article

References (14)

1. S. Matuo and M. Kiuchi: Jpn. J. Appl. Phys. 22 (1983) L210.
2. G. S. Oehrlein, Y. Zhang, D. Vender and M. Haverlag: J. Vac. Sci. & Technol. A12 (1994) 323.
3. G. S. Oehrlein, Y. Zhang, D. Vender and O. Joubert: J. Vac. Sci. & Technol. A12 (1994) 333.
4. Y. Horiike, K. Kubota, H. Shindo and T. Fukasawa: J. Vac. Sci. & Technol. A13 (1995) 801.
5. N. Fujiwara, H. Miyatake, M. Yoneda, K. Nakamoto and H. Abe: Proc, Symp. Dry Process (The Institute of Electrical Engineers Japan, Tokyo, 1991), p. 47.
6. A. C. Westerheim, A. H. Labun, and J. H. Dubash, J. C. Arnold and H. H. Sawin, V. Yu-Wang: J. Vac. Sci. & Technol. A13 (1995) 853.
7. O. Joubert, G. S. Oehrlein, M. Surendra and Y. Zhang: J. Vac. Sci. & Technol. A12 (1994) 1957.
8. O. Joubert, G. S. Oehrlein and Y. Zhang: J. Vac. Sci. & Technol. A12 (1994) 658.
9. T. Fukasawa, K. Kubota, H. Shindo and Y. Horiike: Jpn. J. Appl. Phys. 33 (1994) 7042.
10. K. Siozawa, H. Kimura, K. Kawai, H. Miyatake and M. Yoneda: Proc. 12th Symp. Plasma Processing, Sendai (1995) p. 521.
11. H. Kimura, K. Siozawa, K. Kawai, H. Miyatake and M. Yoneda: Proc. Symp. Dry Process (The Institute of Electrical Engineers Japan, Tokyo, 1994) p. 229.
12. T. Maruyama, N. Fujiwara, K. Siozawa and M. Yoneda: J. Vac. Sci. & Technol. A13 (1995) 810.
13. T. Ono, R. Hamasaki and T. Mizutani: Jpn. J. Appl. Phys. 33 (1994) L1717.
14. T. Maruyama, N. Fujiwara, K. Siozawa and M. Yoneda: Proc. Symp. Dry Process (The Institute of Electrical Engineers Japan, Tokyo, 1995) p. 231.