Junction depth dependence of breakdown in silicon detector diodes

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 373, Issue 2, 1996, Pages 223-226

  Beck, G A ^a   Carter, A A ^a   Carter, J R ^b   Greenwood, N M ^c   Lucas, A D ^c   Munday, D J ^b   Pritchard, T W ^a   Robinson, D ^b   Wilburn, C D ^c   Wyllie, K ^b  

^a QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c BN15 8UN   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; PHOTODIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SILICON;

JUNCTION BREAKDOWN; JUNCTION DEPTH DEPENDENCE; SILICON DETECTOR DIODES;

PARTICLE DETECTORS;

EID: 0030125408     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(96)00015-0     Document Type: Article

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