Photoluminescence spectra of nitrogen-doped ZnSe by photoassisted metal-organic chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 4 B, 1996, Pages

  Fujita, Yasuhisa ^a   Terada, Toshiyuki ^a   Fujii, Satoshi ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; SPECTRUM ANALYSIS;

DONOR TO ACCEPTOR PAIR EMISSION LINE; HOLE CONCENTRATION; NITROGEN DOPING; PHOTOASSISTED METAL ORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE SPECTRA; TERTIARY BUTYLAMINE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030125183     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l473     Document Type: Article

References (11)