Photoluminescence and chemical bonding in porous silicon layers - Dependence on the P concentration in the Si substrate

Thin Solid Films

Volumn 276, Issue 1-2, 1996, Pages 248-252

  Dimova Malinovska, D ^a   Kamenova, M ^a   Sendova Vassileva, M ^a   Marinova, Ts ^b   Krastev, V ^b  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^b INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Bulgaria)

Author keywords

Electron microscopy; Luminescence; Silicon; X ray photoelectron spectroscopy

Indexed keywords

CHEMICAL BONDS; COMPOSITION EFFECTS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; ELECTRON MICROSCOPY; ETCHING; PHOSPHORUS; PHOTOLUMINESCENCE; POROSITY; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

POROUS SILICON LAYERS;

POROUS SILICON;

EID: 0030124698     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08064-3     Document Type: Article

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