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Volumn 21, Issue 4, 1996, Pages 45-49

Substrate engineering with plastic buffer layers

(1)  Schowalter, Leo J a  

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; FLUORINE COMPOUNDS; INTERFACES (MATERIALS); LATTICE CONSTANTS; MECHANICAL PROPERTIES; NUCLEATION; PLASTIC DEFORMATION; SEMICONDUCTING FILMS; SUBSTRATES; THERMODYNAMIC PROPERTIES; THICKNESS MEASUREMENT;

EID: 0030123724     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/S0883769400035338     Document Type: Article
Times cited : (3)

References (25)
  • 1
    • 85033857488 scopus 로고    scopus 로고
    • note
    • This will be true so long as the epitaxial layer is much thicker than the typical spacing between the dislocations in the network.
  • 2
    • 85033853381 scopus 로고    scopus 로고
    • note
    • This is the simplest situation. Other kinds of defects, which are generally more harmful to device performance, are also possible.
  • 3
    • 85033857016 scopus 로고
    • and references therein for a review of the epitaxial growth of fluorides on semiconductors
    • See L.J. Schowalter and R.W. Fathauer, CRC Critical Rev. Solid State Mater. Sci. 15 (1989) p. 376; and references therein for a review of the epitaxial growth of fluorides on semiconductors.
    • (1989) CRC Critical Rev. Solid State Mater. Sci. , vol.15 , pp. 376
    • Schowalter, L.J.1    Fathauer, R.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.