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1
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85033857488
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note
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This will be true so long as the epitaxial layer is much thicker than the typical spacing between the dislocations in the network.
-
-
-
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2
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85033853381
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note
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This is the simplest situation. Other kinds of defects, which are generally more harmful to device performance, are also possible.
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-
-
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3
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85033857016
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and references therein for a review of the epitaxial growth of fluorides on semiconductors
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See L.J. Schowalter and R.W. Fathauer, CRC Critical Rev. Solid State Mater. Sci. 15 (1989) p. 376; and references therein for a review of the epitaxial growth of fluorides on semiconductors.
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L.J. Schowalter, R.W. Fathauer, F.A. Ponce, G. Anderson, and S. Hashimoto, in Heteroepitaxy on Silicon, edited by J.C.C Fan and J.M. Poate (Mater. Res. Soc. Symp. Proc. 67, Pittsburgh, 1986) p. 125.
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