Defect recovery of ion-implanted CdTe

Journal of Crystal Growth

Volumn 161, Issue 1-4, 1996, Pages 128-133

  Burchard, A ^a   Magerle, R ^a   Freidinger, J ^a   Jahn, S G ^b   Deicher, M ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

^b CERN   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL LATTICES; INDIUM; ION IMPLANTATION; IONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SPECTROSCOPY;

CADMIUM TELLURIDE; CRYSTAL QUALITY; PERTURBED ANGULAR CORRELATION TECHNIQUE; PHOTOLUMINESCENCE SPECTROSCOPY; PURITY;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0030123679     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00621-4     Document Type: Article

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