A mixed-mode voltage down converter with impedance adjustment circuitry for low-voltage high-frequency memories

IEEE Journal of Solid-State Circuits

Volumn 31, Issue 4, 1996, Pages 575-584

  Ooishi, Tsukasa ^a,b   Komiya, Yuichiro ^a,c,d   Hamade, Kei ^a,e   Asakura, Mikio ^a,f,g   Yasuda, Kenichi ^a,h   Furutani, Kiyohiro ^a,g,i   Kato, Tetsuo ^a   Hidaka, Hideto ^a   Ozaki, Hideyuki ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

^c KYUSHU UNIVERSITY   (Japan)

^d ULSI Laboratory

^e WASEDA UNIVERSITY   (Japan)

^f KYOTO UNIVERSITY   (Japan)

^g TOHOKU UNIVERSITY

^h KOBE UNIVERSITY   (Japan)

ⁱ UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATOR CIRCUITS; DIFFERENTIAL AMPLIFIERS; ELECTRIC CONVERTERS; ELECTRIC CURRENTS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT TESTING; SEMICONDUCTOR STORAGE;

CONTROLLED INTERNAL VOLTAGE; HIGH FREQUENCY MEMORIES; IMPEDANCE ADJUSTMENT CIRCUITRY; INTERNAL POWER SUPPLY; VOLTAGE DOWN CONVERTER;

RANDOM ACCESS STORAGE;

EID: 0030123597     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.499735     Document Type: Article

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