Investigation on metallurgical properties and electromigration in AlCu metallizations for VLSI applications

Thin Solid Films

Volumn 275, Issue 1-2, 1996, Pages 159-163

  Dietrich, S ^a,b   Schneegans, M ^a   Moske, M ^b   Samwer, K ^b  

^a SIEMENS AG   (Germany)

^b UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

Aluminium; Copper; Electromigration; Metals

Indexed keywords

ALUMINUM ALLOYS; AUGER ELECTRON SPECTROSCOPY; ELECTROMIGRATION; GLASS; GRAIN SIZE AND SHAPE; METALLIZING; METALLURGY; SCANNING ELECTRON MICROSCOPY; SPUTTER DEPOSITION; TITANIUM ALLOYS; VLSI CIRCUITS; X RAY CRYSTALLOGRAPHY;

BORON PHOSPHORUS SILICON GLASS; DEPOSITION PARAMETERS; ENERGY DISPERSIVE X RAY ANALYSIS; METALLURGICAL PROPERTIES; OPTICAL SURFACE REFLECTIVITY; PHYSICAL VAPOUR DEPOSITION; WAFER BOW;

THIN FILMS;

EID: 0030123340     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)07032-X     Document Type: Article

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