Single crystal growth and electrical properties of lanthanum- and gadolinium-doped BaTiO3

Journal of the Ceramic Society of Japan

Volumn 104, Issue 4, 1996, Pages 273-276

  Motohira, Naobumi ^a   Okamoto, Hideaki ^b   Nakamura, Yoshinobu ^b   Kishimoto, Akira ^b   Miyayama, Masaru ^c   Yanagida, Hiroaki ^b  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

BaTiO3; Floating zone method; Low resistance; Reducing treatment; Single crystal

Indexed keywords

ANNEALING; COMPOSITION; CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC PROPERTIES; GADOLINIUM; LANTHANUM; SINGLE CRYSTALS; THERMAL EFFECTS;

CURIE TEMPERATURE; DC FOUR PROBE METHOD; DOPANT CONCENTRATION; FLOATING ZONE METHOD; LOW RESISTANCE; REDUCING TREATMENT;

BARIUM TITANATE;

EID: 0030123196     PISSN: 09145400     EISSN: None     Source Type: Journal    
DOI: 10.2109/jcersj.104.273     Document Type: Article

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