About the origin and the mechanisms involved in the cracking of highly porous silicon layers under capillary stresses

Thin Solid Films

Volumn 276, Issue 1-2, 1996, Pages 219-222

  Belmont, O ^a   Faivre, C ^a   Bellet, D ^a   Brechet, Y ^b  

^a UNIV GRENOBLE ALPES   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

Elastic properties; Growth mechanism; Silicon; Stress

Indexed keywords

CRACK INITIATION; DRYING; ELASTICITY; POROSITY; SEMICONDUCTING SILICON; STRESSES; SURFACE TENSION;

CAPILLARY STRESSES;

POROUS SILICON;

EID: 0030122952     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08057-0     Document Type: Article

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