Influence of gas chemistry and ion energy on contact resistance

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 SUPPL. B, 1996, Pages 2494-2500

  Hashimi, Kazuo ^a   Matsunaga, Daisuke ^a   Kanazawa, Masao ^a   Tomoyasu, Masayuki ^b   Koshiishi, Akira ^b   Ogasawara, Masahiro ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b TOKYO ELECTRON LTD   (Japan)

Author keywords

Contact resistance; Gas chemistry; Oxidation retardation layer; RIE damage; SIMS; SiO2 etching; Vpp; XPS

Indexed keywords

CARBON; CHEMICAL BONDS; ELECTRIC RESISTANCE; FLUOROCARBONS; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SILICA; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

CONTACT HOLE ETCHING; CONTACT RESISTANCE; GAS CHEMISTRY; ION ENERGY; OXIDATION RETARDATION LAYER; PEAK TO PEAK VOLTAGE;

REACTIVE ION ETCHING;

EID: 0030122912     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2494     Document Type: Article

References (4)

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