Polarization of porous silicon photoluminescence: Alignment and built-in anisotropy

Thin Solid Films

Volumn 276, Issue 1-2, 1996, Pages 120-122

  Kovalev, D ^a   Ben Chorin, M ^a   Diener, J ^a   Koch, F ^a   Kux, A ^b   Efros, Al L ^c   Rosen, M ^c   Gippius, N A ^d   Tikhodeev, S G ^d  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b UNIV GRENOBLE ALPES   (France)

^c NAVAL RESEARCH LABORATORY   (United States)

^d PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

Author keywords

Anisotropy; Dielectric properties; Luminescence; Silicon

Indexed keywords

ANISOTROPY; CRYSTAL ORIENTATION; DIELECTRIC PROPERTIES OF SOLIDS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POLARIZATION;

ALIGNMENT ANISOTROPY; BUILT IN ANISOTROPY;

POROUS SILICON;

EID: 0030122706     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08074-0     Document Type: Article

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