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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 A, 1996, Pages 2043-2046

Nitrogen incorporation in a-Ge:H produced in high-hydrogen-dilution plasma

(3) Xu, Jun a Miyazaki, Seiichi a Hirose, Masataka a

a HIROSHIMA UNIVERSITY (Japan)

Author keywords

Amorphous germanium; Conductivity; Doping; Hydrogen dilution

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; NITROGEN; OPTICAL PROPERTIES; PLASMAS; SEMICONDUCTOR DOPING; STRUCTURE (COMPOSITION);

AMORPHOUS GERMANIUM; FILM STRUCTURE; HYDROGEN DILUTION; OPTICAL BANDGAP; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING GERMANIUM;

EID: 0030121679 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.2043 Document Type: Article

Times cited : (4)

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