Nitrogen ion implantation into the amorphous C-N films prepared with ion beam assisted deposition

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 111, Issue 1-2, 1996, Pages 59-62

  Su, X W ^a,b   Song, H W ^a   Zhang, Q Y ^b   Cui, F Z ^a  

^a TSINGHUA UNIVERSITY   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BONDING; DEPOSITION; ION BEAMS; ION IMPLANTATION; NITROGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPUTTERING; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC RATIO; BEAM CURRENT DENSITIES; CLEAVED SURFACES; ION BEAM ASSISTED DEPOSITION; MOLECULAR IONS;

AMORPHOUS FILMS;

EID: 0030121584     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01300-8     Document Type: Article

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