Transmutation doping of wide-bandgap II-VI compounds

Journal of Crystal Growth

Volumn 161, Issue 1-4, 1996, Pages 82-85

  Wienecke, M ^a   Bollmann, J ^a   Rohrich J ^a   Maass, K ^a   Reinhold, B ^a   Forkel Wirth, D ^b  

^a HUMBOLDT UNIVERSITY   (Germany)

^b CERN   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CADMIUM; CADMIUM ALLOYS; CAPACITANCE MEASUREMENT; DOPING (ADDITIVES); ION IMPLANTATION; POINT DEFECTS; RADIOISOTOPES; VOLTAGE MEASUREMENT; ZINC ALLOYS;

CADMIUM TELLURIDE; CAPACITANCE VOLTAGE MEASUREMENTS; TRANSMUTATION DOPING; ZINC TELLURIDE;

TRANSITION METAL ALLOYS;

EID: 0030121473     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00615-X     Document Type: Article

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