Measured stopping cross sections for helium in a-SixC1 - X:H compounds near their maximum values

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 111, Issue 1-2, 1996, Pages 17-21

  Leblanc, L ^a   Ross, G G ^a   Gollier, P A ^b   Bertrand, P ^b  

^a INRS EMT   (Canada)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; BONDING; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; COMPOSITION; ELECTRON ENERGY LEVELS; ENERGY DISSIPATION; MULTILAYERS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE;

AREAL DENSITY RATIO; BRAGG RULE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STOPPING CROSS SECTIONS; STOPPING POWER;

HELIUM;

EID: 0030121289     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01290-7     Document Type: Article

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