Monte Carlo simulation for Auger depth profiling of GaAs/AlAs superlattice structure by Ar+ ion sputtering

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 A, 1996, Pages 2271-2274

  Lee, Hyung Ik ^a   Shimizu, Ryuichi ^a   Inoue, Masahiko ^a   Kajiwara, Kazuo ^b   Hofmann, Siegfried ^a,c  

^a OSAKA UNIVERSITY   (Japan)

^b SONY CORPORATION   (Japan)

^c MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

Depth profiling; Depth resolution; GaAs AlAs; Monte Carlo simulation

Indexed keywords

ARGON; COMPUTER SIMULATION; CRYSTAL STRUCTURE; INTERFACES (MATERIALS); IONS; MATHEMATICAL MODELS; MIXING; MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SPUTTERING;

ATOMIC MIXING; AUGER DEPTH PROFILING; DEPTH RESOLUTION; ION SPUTTERING;

SEMICONDUCTOR SUPERLATTICES;

EID: 0030121269     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2271     Document Type: Article

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