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Volumn 40, Issue 2, 1996, Pages 133-176

A review of analytic solutions for a model p-n junction cell under low-injection conditions

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; SEMICONDUCTOR DEVICE MODELS;

EID: 0030121251     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-0248(95)00075-5     Document Type: Article
Times cited : (5)

References (18)
  • 1
    • 0002130091 scopus 로고
    • T.J. Coutts and J.D. Meakin (Eds.), Academic Press, NY
    • R.J. Schwartz, in: T.J. Coutts and J.D. Meakin (Eds.), Current Topics in Photovoltaics, Vol. 4 (Academic Press, NY, 1990).
    • (1990) Current Topics in Photovoltaics , vol.4
    • Schwartz, R.J.1
  • 4
    • 0004057053 scopus 로고
    • R.K. Willardson and A.C. Beer (Eds.), Academic Press, NY
    • H.J. Hovel, in: R.K. Willardson and A.C. Beer (Eds.), Semiconductors and Semimetals, Vol. 11 (Academic Press, NY, 1975).
    • (1975) Semiconductors and Semimetals , vol.11
    • Hovel, H.J.1
  • 7
    • 0003879668 scopus 로고
    • Wiley, NY
    • A.S. Grove, Physics and Technology of Semiconductor Devices (Wiley, NY, 1967) p. 123 shows that minority carrier drift is negligible compared with minority carrier diffusion under low-injection conditions in the QNRs.
    • (1967) Physics and Technology of Semiconductor Devices , pp. 123
    • Grove, A.S.1
  • 8
    • 0004278609 scopus 로고
    • Cambridge University Press
    • R.A. Smith, Semiconductors (Cambridge University Press, 1959) pp. 253-255.
    • (1959) Semiconductors , pp. 253-255
    • Smith, R.A.1
  • 16
    • 85029999289 scopus 로고    scopus 로고
    • note
    • p,n|-kT/q).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.