Far infrared spectroscopy of thin epitaxial layers of GaN deposited by molecular beam epitaxy on GaP substrates

Infrared Physics and Technology

Volumn 37, Issue 3, 1996, Pages 389-394

  Mirjalili, G ^a   Dumelow, T ^a,c   Parker, T J ^a   Shayesteh, S Farjami ^a   Cheng, T S ^b   Foxon, C T ^b   Jenkins, L C ^b   Lacklinson, D E ^b  

^a UNIVERSITY OF ESSEX   (United Kingdom)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c FEDERAL UNIVERSITY OF RIO GRANDE DO NORTE   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING; DIELECTRIC PROPERTIES; FREQUENCIES; LIGHT POLARIZATION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; OSCILLATORS (ELECTRONIC); PHONONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; THIN FILMS;

DIELECTRIC RESPONSE; HARMONIC OSCILLATORS; OBLIQUE INCIDENCE REFLECTION SPECTROSCOPY; RESTSTRAHLEN REGION;

INFRARED SPECTROSCOPY;

EID: 0030121048     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/1350-4495(95)00072-0     Document Type: Article

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