Auger lineshape analysis of porous silicon: Experiment and theory

Thin Solid Films

Volumn 276, Issue 1-2, 1996, Pages 244-247

  Dorigoni, L ^a   Pavesi, L ^a   Bisi, O ^a   Calliari, L ^b   Anderle, M ^b   Ossicini, Stefano ^c  

^a UNIVERSITY OF TRENTO   (Italy)

^b Ctro Materiali Biofis Medica CMBM   (Italy)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

Auger electron spectroscopy; Nanostructures; Silicon

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRON ENERGY LEVELS; HYDROGEN BONDS; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS;

AUGER LINESHAPE ANALYSIS;

POROUS SILICON;

EID: 0030120846     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08063-5     Document Type: Article

References (12)

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