Pulsed excimer laser crystallization of evaporated amorphous silicon films the role of SiO2 underlayer thickness

Physica Status Solidi (A) Applied Research

Volumn 154, Issue 2, 1996, Pages 647-656

  Luby, S ^a   Jergel, M ^a   Majkova, E ^a   D'Anna, E ^b   Luches, A ^b   Martino, M ^b   Brunel, M ^c   Vavra, I ^d  

^a INSTITUTE OF PHYSICS   (Slovakia)

^b UNIVERSITY OF SALENTO   (Italy)

^c LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^d INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTAL STRUCTURE; CRYSTALLIZATION; EXCIMER LASERS; FILM PREPARATION; MELTING; SCANNING ELECTRON MICROSCOPY; SILICA; THERMAL GRADIENTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GRAZING INCIDENCE X RAY DIFFRACTION; SILICA UNDERLAYER THICKNESS;

AMORPHOUS SILICON;

EID: 0030120687     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.2211540218     Document Type: Article

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