Polarization memory induced by polarized light-assisted anodization of n-type Si

Thin Solid Films

Volumn 276, Issue 1-2, 1996, Pages 235-237

  Polisski, G ^a   Andrianov, A V ^b   Kovalev, D ^a   Koch, F ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Anodic oxidation; Etching; Luminescence

Indexed keywords

ANISOTROPY; ANODIC OXIDATION; CRYSTAL ORIENTATION; ENERGY GAP; ETCHING; LIGHT POLARIZATION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; TEXTURES;

MICROPOROUS SILICON; POLARIZATION MEMORY EFFECT;

POROUS SILICON;

EID: 0030120544     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08061-9     Document Type: Article

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