The influence of the doping level on the optical properties of porous silicon

Thin Solid Films

Volumn 276, Issue 1-2, 1996, Pages 231-234

  Hilbrich, S ^a   Theiss W ^a   Arens Fischer, R ^b   Gluck O ^b   Berger, M G ^b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Luminescence; Optical properties; Raman scattering; Silicon

Indexed keywords

CHEMICAL BONDS; DOPING (ADDITIVES); LIGHT REFLECTION; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SUBSTRATES;

STRETCHING MODES;

POROUS SILICON;

EID: 0030120505     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08060-0     Document Type: Article

References (7)

1. A. Halimaoui, in J.-C. Vial and J. Derrien (eds.), Porous Silicon Science and Technology, Springer Verlag, Berlin, Les Editions de Physique (France), 1994, p. 33.
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4. C. Delerue et al., in J.-C. Vial and J. Derrien (eds.), Porous Silicon Science and Technology, Springer Verlag, Berlin, Les Editions de Physique (France), 1994, p. 91.
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6. S. Frohnhoff et al., Thin Solid Films, 255 (1995) 115.
7. J.-C. Vial, in J.-C. Vial and J. Derrien (eds.), Porous Silicon Science and Technology, Springer Verlag, Berlin, Les Editions de Physique (France), 1994, p. 137.