Temperature-dependent photoluminescence in porous amorphous silicon

Thin Solid Films

Volumn 276, Issue 1-2, 1996, Pages 134-137

  Bustarret, E ^a   Sauvain, E ^a   Ligeon, M ^b   Rosenbauer, M ^c  

^a LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^b UNIV GRENOBLE ALPES   (France)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

Amorphous materials; Luminescence; Silicon; Transmission electron microscopy

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; DOPING (ADDITIVES); HYDROGENATION; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

POROUS AMORPHOUS SILICON;

POROUS SILICON;

EID: 0030120455     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08084-8     Document Type: Article

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