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Volumn 2, Issue 1, 1996, Pages 135-140

Polarization sensing with resonant cavity enhanced photodetectors

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; IMAGING TECHNIQUES; LIGHT POLARIZATION; MIRRORS; MONOLITHIC INTEGRATED CIRCUITS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030114132     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.541883     Document Type: Article
Times cited : (4)

References (11)
  • 1
    • 0030081756 scopus 로고    scopus 로고
    • Photodiodes advance optical storage devices
    • Feb.
    • K. Kaufmann, "Photodiodes advance optical storage devices," Laser Focus World, vol. 32. no. 2, pp. 109-112, Feb. 1996.
    • (1996) Laser Focus World , vol.32 , Issue.2 , pp. 109-112
    • Kaufmann, K.1
  • 2
    • 0002657394 scopus 로고
    • Imaging technology reveals the polarized light fields that exist in nature
    • Mar./Apr.
    • T. Cronin, N. Shashar, and L. Wolff, "Imaging technology reveals the polarized light fields that exist in nature," Biophoton. Int., pp. 38-41, Mar./Apr. 1995.
    • (1995) Biophoton. Int. , pp. 38-41
    • Cronin, T.1    Shashar, N.2    Wolff, L.3
  • 3
    • 0010281418 scopus 로고
    • Polarization vision for object detection
    • L. W. Wolff and P. Costaines, "Polarization vision for object detection," Proc. SPIE, vol. 2103, pp. 106-114, 1994.
    • (1994) Proc. SPIE , vol.2103 , pp. 106-114
    • Wolff, L.W.1    Costaines, P.2
  • 4
    • 84975561118 scopus 로고
    • Planar integration of free-space optical components
    • J. Jahns and A. Huang, "Planar integration of free-space optical components," Appl. Opt., vol. 28, no. 9, 1989.
    • (1989) Appl. Opt. , vol.28 , Issue.9
    • Jahns, J.1    Huang, A.2
  • 5
    • 0028494294 scopus 로고
    • Diffractiveoptic polarization-sensing element for magneto-optic storage heads
    • R. K. Kostuk, T.-J. Kim, G. Campbell, and C. W. Han, "Diffractiveoptic polarization-sensing element for magneto-optic storage heads," Opt. Lett., vol. 19, pp. 1257-1259, 1994.
    • (1994) Opt. Lett. , vol.19 , pp. 1257-1259
    • Kostuk, R.K.1    Kim, T.-J.2    Campbell, G.3    Han, C.W.4
  • 6
    • 0027927103 scopus 로고
    • Polarization and wavelength dependence of metal-semiconductor-metal photodetector response
    • J. J. Kuta, H. M. van Driel, D. Landheer, and J. A. Adams, "Polarization and wavelength dependence of metal-semiconductor-metal photodetector response," Appl. Phys. Lett., vol. 64, pp. 140-142, 1994.
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 140-142
    • Kuta, J.J.1    Van Driel, H.M.2    Landheer, D.3    Adams, J.A.4
  • 7
    • 0028526617 scopus 로고
    • Platinumsilicide Schottky barrier infrared detectors with a grating: Dependence of the optical response on wavelength and polarization
    • K. Kapser, P. P. Deimel, W. Platz, and U. Prechtel, "Platinumsilicide Schottky barrier infrared detectors with a grating: Dependence of the optical response on wavelength and polarization," Appl. Phys. Lett., vol. 65, no. 2. pp. 1986-1988, 1994.
    • (1994) Appl. Phys. Lett. , vol.65 , Issue.2 , pp. 1986-1988
    • Kapser, K.1    Deimel, P.P.2    Platz, W.3    Prechtel, U.4
  • 9
    • 0030109988 scopus 로고    scopus 로고
    • Polarization sensing with resonant cavity enhanced photodetectors
    • M. S. Ünlü, and H. P. Zengingönül, "Polarization sensing with resonant cavity enhanced photodetectors," Electron Lett., vol. 32, no. 6, pp. 591-593, 1996.
    • (1996) Electron Lett. , vol.32 , Issue.6 , pp. 591-593
    • Ünlü, M.S.1    Zengingönül, H.P.2
  • 10
    • 5344223935 scopus 로고
    • Resonant cavity enhanced (RCE) photonic devices
    • M. S. Ünlü and S. Strite, "Resonant cavity enhanced (RCE) photonic devices." J. Appl. Phys. Rev., vol. 78, no. 2, pp. 607-639, 1995.
    • (1995) J. Appl. Phys. Rev. , vol.78 , Issue.2 , pp. 607-639
    • Ünlü, M.S.1    Strite, S.2
  • 11
    • 36449008101 scopus 로고
    • -xAs-GaAs metal-oxide semiconductor field effect transistors formed by lateral vapor oxidation of AlAs
    • -xAs-GaAs metal-oxide semiconductor field effect transistors formed by lateral vapor oxidation of AlAs." Appl. Phys. Lett., vol. 66, no. 20, pp. 2688-2690, 1995.
    • (1995) Appl. Phys. Lett. , vol.66 , Issue.20 , pp. 2688-2690
    • Chen, E.I.1    Holonyak Jr., N.2    Maranowski, S.A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.