Free exciton recombination in GaP and GaP/AlxGa1-xP layers grown by temperature difference method under controlled vapor pressure

Journal of Crystal Growth

Volumn 160, Issue 1-2, 1996, Pages 13-20

  Suto, K ^a   Adachi, S ^a   Yoneyama, T ^a   Nishizawa, J ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DIFFUSION IN SOLIDS; ELECTRON ENERGY LEVELS; EXCITONS; HETEROJUNCTIONS; LIQUID PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL VARIABLES CONTROL; VAPOR PRESSURE;

CONTROLLED VAPOR PRESSURE; FREE EXCITON RECOMBINATION; GALLIUM PHOSPHIDE; HETEROSTRUCTURE BARRIER; TEMPERATURE DIFFERENCE METHOD;

SEMICONDUCTOR GROWTH;

EID: 0030110278     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00541-2     Document Type: Article

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