Recombination centers identification in very thin silicon epitaxial layers via lifetime measurements

IEEE Electron Device Letters

Volumn 17, Issue 3, 1996, Pages 148-150

  Daliento, S ^b   Sanseverino, A ^b   Spirito, P ^b   Sarro, P M ^a,c   Zeni, L ^b  

^a IEEE

^b UNIVERSITY OF NAPLES FEDERICO II   (Italy)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; ION IMPLANTATION; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; THERMAL EFFECTS; THERMOANALYSIS;

DOPANT CONCENTRATION; LIFETIME MEASUREMENTS; RECOMBINATION CENTERS IDENTIFICATION; SILICON EPITAXIAL LAYERS; TEMPERATURE DEPENDENCE;

THIN FILMS;

EID: 0030109918     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.485196     Document Type: Article

References (8)

1. P. Spirito and G. Cocorullo. "A measurement technique to obtain the recombination lifetime profile in epilayers at any injection level," IEEE Trans. Electron Devices, vol. 34, pp. 2546-2554 Dec. 1987.
2. P. Spirito and S. Bellone, "Detection of recombination centers in epitaxial layers by temperature scanning and depth lifetime profiling," IEEE Electron Device Lett., vol. 12, pp. 332-334, June 1991.
3. P. Spirito and A. Sanseverino, "Determination of the energy levels of recombination centers in low-doped Si layers by temperature dependence of recombination lifetime," Solid State Electron., vol. 37, pp. 1429-1433, July 1994.
4. S. Daliento, N. Rinaldi, A. Sanseverino, and P. Spirito, "Two dimensional analysis of a test structure for lifetime profile measurements," IEEE Trans. Electron Devices, vol. 42, pp. 1924-1928, Nov. 1995.
5. L. K. Nanver, E. J. G. Goudena, and H. W. van Zeijl, "DIMES-01 a baseline BIFET process for smart sensor experimentation," Sensors and Actuators. vol. 36, pp. 199-147, Apr. 1993.
6. R. Lowney, R. D. Larrabee, and W. R. Thurber, "The relationship between deep-level measurement and lifetime in devices," in IEEE Proc. Custom Intergrated Circuits Conf., pp. 152-156, May 1983.
7. S. M. Sze, Physics of Semiconductor Devices, 2d ed. New York: Wiley, 1981, p. 25.
8. D. Bielle-Daspet, "Effective recombination levels in N- and P-type silicon," Solid-State Electron., vol. 16, pp. 1103-1123, Oct. 1973.