Resonant Raman scattering from phonons in GaAs/(GaAs)m(AlAs)n quantum wire structures

Applied Physics Letters

Volumn 68, Issue 11, 1996, Pages 1519-1521

  MacIel, A C ^a   Freyland, J M ^a   Rota, L ^a   Kiener, C ^a   Ryan, J F ^a   Marti, U ^b   Martin, D ^b   Morier Gemoud, F ^b   Reinhart, F K ^b  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RESONANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM ARSENIDE; PHONON FREQUENCIES; SCANNING TUNNELING LUMINESCENCE; V GROOVE QUANTUM WIRE;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0030109212     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115685     Document Type: Article

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