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Volumn 68, Issue 13, 1996, Pages 1844-1846

Screening effects on the band-gap renormalization of strained InGaAs/InGaAsP quantum well lasers lattice matched to GaAs

(2) Park, Seoung Hwan a Ahn, Doyeol b

a Catholic University of Daegu (South Korea)

b LG Electronics Inc (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP RENORMALIZATION; ENVELOPE FUNCTION APPROXIMATION; INDIUM GALLIUM ARSENIC PHOSPHIDE; INDIUM GALLIUM ARSENIDE; MULTISUBBAND EFFECTS; SCREENING EFFECTS; VALENCE BAND MIXING;

APPROXIMATION THEORY; CALCULATIONS; CARRIER CONCENTRATION; CHARGE CARRIERS; COMPOSITION; ELECTRONIC DENSITY OF STATES; ENERGY GAP; FERMI LEVEL; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

QUANTUM WELL LASERS;

EID: 0030109067 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.116032 Document Type: Article

Times cited : (8)

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