REM study of high index Si(5 5 12) flat surfaces

Surface Science

Volumn 348, Issue 3, 1996, Pages 335-343

  Suzuki, T ^a   Minoda, H ^a   Tanishiro, Y ^a   Yagi, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Faceting; Reflection electron microscopy (REM); Reflection high energy electron diffraction (RHEED); Silicon; Surface roughening

Indexed keywords

CALCULATIONS; ELECTRON MICROSCOPY; HEATING; MORPHOLOGY; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SILICON WAFERS; SURFACE ROUGHNESS; SURFACE STRUCTURE; SURFACE TREATMENT; TEMPERATURE;

FACETING; FRINGES; HIGH INDEX SILICON FLAT SURFACES; HILL STRUCTURE; REFLECTION ELECTRON MICROSCOPY; ROUGHENING TRANSITION; SURFACE ROUGHENING; VALLEY STRUCTURE;

SURFACES;

EID: 0030108960     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01034-3     Document Type: Article

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