Options for multilevel metallization

Solid State Technology

Volumn 39, Issue 3, 1996, Pages

  Butler, David ^a,b,c  

^a Electrotech   (United Kingdom)

^b LOUGHBOROUGH UNIVERSITY   (United Kingdom)

^c Electrotech Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHEMICAL VAPOR DEPOSITION; METALLIZING; SPUTTER DEPOSITION;

ALUMINUM REFLOW; FORCEFILL ALUMINUM TECHNIQUE; MULTILEVEL METALLIZATION;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0030108735     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (10)

1. E. J H Chiang et al., Aluminum planarization For Sub-Micron Devices Using A High Temperature 2-Step Aluminum Process, VMIC, pp. 210 - 203 (1994).
2. Z. Xu et al., Contact Via and Trench Fill by Al Planarization Processes, VMIC, pp. 158-161 (1994).
3. G. A. Dixit et al., A Novel High Pressure Low Temperature Aluminum Plug Technology for Sub-0.5-μ Contact Via Geometries, IEDM, pp. 105 - 108 (1994).
4. P. J. Holverson et al., A Multlievel Al-Plug Technology for Sub-Half Micron Metaillzation, VMIC, pp. 537 - 543 (1995).
5. L.C. Parillo, issues in Developing a Manufacturable interconnect Technology, ULSI, Austin, TX, pp. 3 - 16 (1994).
6. I.S. Park et al., Optimised Al-Reflow Process for Via Appilcation and its Reilability Characteristics, ULSI, Portland, OR (1995).
7. D.C. Butler et al., Enhanced Bottom Coverage of Sub-Micron Contact Holes Using a Novel Hi-Fill Ti/TiN Sputter Process, ULSI, Austin, TX, pp. 277 - 284 (1994).
8. K. Mizobuchi et al., Application of Forceifll Al-plug technology to 64 Mb DRAM and 0.35-μm logic, VLSI symposium, Kyoto, Japan, pp. 45 - 46 (1995).
9. K. Hamamoto et al., Low Cost, High Reilability Metallization Technology Using High Pressure, Low Temperature Al Plug, ULSI, Portiand, OR (1995).
10. G.A. Dixit et al., "Application of High Pressure Extruded Aluminum to ULSI Metallization," Serniconductor International, pp. 79-86 (Aug. 1995).