Temperature dependence of quantized states in an InGaAs/GaAs strained asymmetric triangular quantum well

Semiconductor Science and Technology

Volumn 11, Issue 3, 1996, Pages 345-351

  Chi, W S ^a   Lin, D Y ^a   Huang, Y S ^a   Qiang, H ^b   Pollak, F H ^b   Mathine, D L ^c   Maracas, G N ^c  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b CITY UNIVERSITY OF NEW YORK   (United States)

^c Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRON TRANSITIONS; EXCITONS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; TEMPERATURE; THERMAL EFFECTS;

CONTACTLESS ELECTROREFLECTANCE; DIGITAL ALLOY COMPOSITIONAL GRADING METHOD; INDIUM GALLIUM ARSENIDE; PHOTOREFLECTANCE; PIEZOREFLECTANCE; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030108551     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/3/012     Document Type: Article

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