Etch-stop behavior of buried layers formed by substoichiometric nitrogen ion implantation into silicon

Journal of the Electrochemical Society

Volumn 143, Issue 3, 1996, Pages 1026-1033

  Perez Rodriguez A ^a   Romano Rodriguez A ^a   Morante, J R ^a   Acero, M C ^b   Esteve, J ^b   Montserrat, J ^b   El Hassani, A ^c  

^a UNIVERSITY OF BARCELONA   (Spain)

^b CSIC   (Spain)

^c MOULAY ISMAIL UNIVERSITY   (Morocco)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ETCHING; GETTERS; NITROGEN; OXIDATION; PHASE SEPARATION; SILICON; SILICON WAFERS; STOICHIOMETRY;

BURIED LAYERS; ETCH STOP BEHAVIOR; NITROGEN GETTERING; POTASSIUM HYDROXIDE; SUBSTOICHIOMETRIC NITROGEN ION IMPLANTATION; TETRAMETHYL AMMONIUM HYDROXIDE;

ION IMPLANTATION;

EID: 0030108509     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836576     Document Type: Article

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